Manufacturing Of Silicon Carbide

Silicon carbide is extremely rare in nature, and silicon carbide for industrial applications relies on artificial synthesis. Synthesis methods vary depending on the product form and application scenario. Its primary manufacturing methods fall into two major categories: traditional high-temperature synthesis (used for abrasives and refractories) and advanced crystal growth methods (used for semiconductor devices).

The traditional high-temperature method (Acheson process) meets the demand for abrasives and refractories at low cost. Advanced crystal growth techniques (PVT method, CVD method) enable the precise control required for producing semiconductor-grade materials, supporting the development of high-end sectors such as new energy vehicles and 5G communications.

 

The Acheson Process is currently the mainstream industrial synthesis method. This method primarily produces powdered or lump-shaped silicon carbide. This production method features mature technology and relatively low costs, and is mainly used in mid-to-low-end applications such as abrasives and refractory materials.

Specific Process Flow:

• Raw Material Proportioning and Mixing: High-purity quartz sand and coke are blended at a molar ratio of approximately 1:3. A small amount of salt and wood chips are added to form a uniform mixed powder.
• Charging and Electric Heating: The mixed powder is loaded into a rectangular resistance furnace. The furnace body is constructed with refractory bricks and contains embedded graphite electrodes. When energized, the electrodes generate Joule heating through the powder, raising the core temperature to 1900-2200°C while maintaining lower temperatures at the periphery.
• Reaction and Holding: The high-temperature reaction continues for 10-30 hours, with the exact duration adjusted based on furnace scale. High-purity α-SiC forms in the furnace core, while the peripheral zone may retain unreacted quartz sand and coke due to insufficient temperature, requiring subsequent separation.
• Cooling and Purification: After reaction completion, power is shut off and the furnace is allowed to cool naturally to room temperature. The material is then removed and processed through crushing, screening, acid washing (using hydrochloric acid to remove iron impurities), and alkali washing (using sodium hydroxide to remove residual SiO₂) to obtain silicon carbide powder or lump material of various particle sizes.

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